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參數(shù)資料
| 型號(hào)： | MP4T632500 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | 3 Volt, General Purpose Low Noise High fT Silicon Transistor |
| 中文描述： | 3伏，通用低噪音，高fT的硅晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 201K |
| 代理商： | MP4T632500 |
3 Volt, General Purpose Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6325 Series
Electrical Specifications at 25
°
C
Symbol
Parameters
Test
Conditions
V
CE
= 3V
I
C
= 10 mA
V
CE
= 3V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3V
I
C
= 2 mA
f = 1 GHz
V
CE
= 3V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3V
I
C
= 10 mA
f = 2 GHz
V
CE
= 3V
I
C
= 15 mA
f = 900MHz
Junction/
Ambient
Junction/
Case
Units
MP4T632500
Chip
11 typ.
MP4T632533
SOT-23
10 typ.
MP4T632535
Micro-X
11 typ.
MP4T632539
SOT-143
11 typ.
fT
Gain Bandwidth
Product
Insertion Power
Gain
GHz
|S
21E
|
2
dB
12 typ.
8 typ.
1.5 typ.
14.5 typ.
9 typ.
10 typ.
8 typ.
11 typ.
7 typ.
1.6 typ.
13 typ.
8 typ.
9 typ.
8 typ.
650 typ.
12 typ.
8 typ.
1.5 typ.
14.5 typ.
9 typ.
10 typ.
8 typ.
500 typ.
11 typ.
7 typ.
1.6 typ.
13 typ.
8 typ.
9 typ.
8 typ.
625 typ.
NF
Noise Figure
dB
GTU (max)
Unilateral Gain
dB
MAG
Maximum
Available Gain
dB
P
1dB
Power Out at 1dB
Compression
dBm
R
TH (J-A)
Thermal
Resistance
Thermal
Resistance
°
C/W
R
TH (J-C)
°
C/W
70 max.
1
200 typ.
200 typ.
200 typ.
1.
Maximum Ratings at 25
°
C
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
Power Dissiapation
1.
See Typical Performance Curves for power derating.
Electrical Specifications at 25
°
C
Parameters
Collector Cut-off Current
Junction/Heat Sink R
TH
(J-C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
T
STG
P
D
Maximum Rating
8 V
6 V
1.5 V
25 mA
200
°
C
-65
°
C to +200
°
C
-65
°
C to +125
°
C
150mW
1
Conditions
V
CB
= 5 V
I
E
= 0
V
EB
= 1 V
I
C
= 0
V
CE
= 3 V
I
C
= 3 mA
V
CB
= 3 V
I
E
= 0
f = 1 MHz
Symbol
I
CBO
Min.
Typ.
Max.
100
Units
nA
Emitter Cut-off Current
I
EBO
1
μ
A
Forward Current Gain
h
FE
20
90
200
Collector Base
Junction Capacitance
C
OB
0.52
0.70
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP4T632533 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, General Purpose Low Noise High fT Silicon Transistor |
| MP4T632535 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, General Purpose Low Noise High fT Silicon Transistor |
| MP4T632539 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, General Purpose Low Noise High fT Silicon Transistor |
| MP4T6365 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low OperatingVoltage, High fT Bipolar Microwave Transistors |
| MP4T636500 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low OperatingVoltage, High fT Bipolar Microwave Transistors |
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