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參數(shù)資料
| 型號： | MP4212 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.32 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-25A1C, SIP-10 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 211K |
| 代理商： | MP4212 |
MP4212
2006-10-27
3
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
―
5
A
Pulse drain reverse current
IDRP
―
20
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
―
1.7
V
Reverse recovery time
trr
―
70
―
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/μs
―
0.1
―
μC
Electrical Characteristics (Ta = 25°C) (Pch MOS FET)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
μA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
―
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 2.5 A
―
0.24
0.28
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
―
0.16
0.19
Forward transfer admittance
|Yfs|
VDS = 10 V, ID =2.5 A
2.0
4.0
―
S
Input capacitance
Ciss
―
630
―
pF
Reverse transfer capacitance
Crss
―
95
―
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
290
―
pF
Rise time
tr
―
25
―
Turn-on time
ton
―
45
―
Fall time
tf
―
55
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
―
200
―
ns
Total gate charge
(gate-source plus gate-drain)
Qg
―
22
―
nC
Gate-source charge
Qgs
―
16
―
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
―
6
―
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
―
5
A
Pulse drain reverse current
IDRP
―
20
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
―
1.7
V
Reverse recovery time
trr
―
80
―
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/μs
―
0.1
―
μC
10 V
0 V
VGS
R
L=
12
VDD ≈ 30 V
ID = 2.5 A
VOUT
4.7
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