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參數資料
| 型號： | MP4015 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module |
| 中文描述： | 東芝功率晶體管模塊 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 141K |
| 代理商： | MP4015 |
MP4015
2002-11-20
3
Collector-emitter voltage V
CE
(V)
C
C
r
th
– t
w
Pulse width t
w
(s)
T
t
Ambient temperature Ta (°C)
P
T
– Ta
T
T
Total power dissipation P
T
(W)
T
j
– P
T
J
T
j
1
2
3
4
0
160
40
80
120
5
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(1)
(2)
(3)
(4)
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
0.001
0.01
0.1
1
10
100
1000
0.5
1
3
5
10
30
50
100
300
Curves should be applied in thermal
limited area (single nonrepetitive pulse)
below figure show thermal resistance per
1 unit versus pulse width.
(4)
(3)
(2)
(1)
0
8
40
2
4
6
80
120
160
200
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.05
0.1
3
5
10
30
50
100
0.3
0.5
1
3
5
10
20
IC max (pulsed)*
10 ms*
1 ms*
VCEO max
Safe Operating Area
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