參數資料
型號: MP4006
廠商: Toshiba Corporation
英文描述: Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
中文描述: 硅npn型
文件頁數: 2/7頁
文件大?。?/td> 163K
代理商: MP4006
MP4006
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Σ
R
th (j-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C)
(NPN transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 80 V, I
E
= 0 A
10
μA
Collector cut-off current
I
CEO
V
CE
= 80 V, I
B
= 0 A
10
μA
Emitter cut-off current
I
EBO
V
EB
= 8 V, I
C
= 0 A
0.8
4.0
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
80
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A
80
V
DC current gain
h
FE
V
CE
= 2 V, I
C
= 1 A
2000
Collector-emitter
V
CE (sat)
I
C
= 1 A, I
B
= 1 mA
1.5
Saturation voltage
Base-emitter
V
BE (sat)
I
C
= 1 A, I
B
= 1 mA
2.0
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.5 A
100
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
20
pF
Turn-on time
t
on
0.4
Storage time
t
stg
4.0
Switching time
Fall time
t
f
I
B1
=
I
B2
= 1 mA, duty cycle
1%
0.6
μs
I
B
20 μs
V
CC
= 30 V
Output
3
I
B2
I
B1
Input
I
B
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