參數(shù)資料
型號(hào): MP04TT600-15
廠商: Dynex Semiconductor Ltd.
英文描述: Dual Thyristor Water Cooled Module Preliminary Information
中文描述: 雙晶閘管水冷模塊的初步信息
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 264K
代理商: MP04TT600-15
MP04TT600
3/8
www.dynexsemi.com
Units
mA
V/
μ
s
A/
μ
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125
C
To 67% V
DRM
, T
j
= 125
C
From 67% V
DRM
to 500A, gate source 10V, 5
t
r
= 0.5
μ
s, T
j
= 125
C
At T
vj
= 125
C
At T
vj
= 125
C
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.85
0.38
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
Note:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
相關(guān)PDF資料
PDF描述
MP04TT600-16 Dual Thyristor Water Cooled Module Preliminary Information
MP04TT600-17 Dual Thyristor Water Cooled Module Preliminary Information
MP04TT600-18 Dual Thyristor Water Cooled Module Preliminary Information
MP06 Power Rheostats
MP25 Power Rheostats
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