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參數(shù)資料
| 型號： | MP03HBT360-12 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Dual Thyristor, Thyristor/Diode Module |
| 中文描述： | 553 A, 1200 V, SCR |
| 封裝： | MP03, 7 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 262K |
| 代理商： | MP03HBT360-12 |
MP03XXX360
2/9
www.dynexsemi.com
Test Conditions
Half wave resistive load
T
case
= 75
C
T
case
= 85
C
T
heatsink
= 75
C
T
heatsink
= 85
C
T
case
= 75
C
10ms half sine, T
j
= 130
C
V
R
= 0
10ms half sine, T
j
= 130
C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
355
312
276
242
560
8.1
0.33x10
6
6.5
0.21x10
6
3000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M5
Electrical connections - M8
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.105
0.115
0.12
0.05
135
135
5(44)
9(80)
950
Min.
-
-
-
-
-
–
40
-
-
-
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