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| 型號： | MP03HBN360-18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Dual Thyristor, Thyristor/Diode Module |
| 中文描述： | 560 A, 1800 V, SCR |
| 封裝： | MP03, 5 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 262K |
| 代理商： | MP03HBN360-18 |
MP03XXX360
4/9
www.dynexsemi.com
Fig. 6 Transient thermal impedance - dc
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 130C)
Fig. 5 Gate characteristics
1600
1200
800
400
1400
1000
600
200
0
0.6
I
T
1.0
1.4
1.8
Instantaneous on-state voltage, V
T
- (V)
Measured under pulse conditions
T
j
= 135
C
0.8
1.2
1.6
20
15
10
5
0
P
1
10
1
2
3 45
50
ms
Cycles at 50Hz
Duration
150
175
200
I
2
t
2
s
3
)
I
2
t
I
2
t =
2
x t
2
10
20 30
100
10
1
0.1
0.001
0.1
0.01
I
GD
0.1
10
I
FGM
V
FGM
LwrLm %
UprLmt9%
T
j
4
C
T
j
= 25
C
T
j
C
G
G
Gate trigger current, I
GT
- (A)
75W
10W
Table gives pulse power P
GM
in Watts
Pulse width
μs
20
25
100
500
1ms
10ms
Frequency Hz
50
100
100
100
100
100
10
-
100
100
100
100
100
50
400
100
100
100
25
-
-
Region of
certain
triggering
100
10
1.0
0.1
0.01
0.001
Time - (s)
0.15
0
0.10
0.05
T
t
C
d.c.
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