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| 型號(hào)： | MNLMH6628-X-RH |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
| 中文描述： | 雙寬帶，低噪聲，電壓反饋運(yùn)算放大器，保證30萬次（市）進(jìn)行測試，以符合MIL - STD - 883方法1019 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 176K |
| 代理商： | MNLMH6628-X-RH |
MNLMH6628-X-RH REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
" Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as
specified on the Internal Processing Instructions (IPI).
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Ib
Input Bias
Current
1
-1.0
+1.0
uA
1
Vio
Input Offset
Voltage
1
-0.2
+0.2
mV
1
Icc
Supply Current
Rl = Infinity
1
-1
+1
mA
1
Note 1:
Note 2:
Note 3:
If not tested, shall be guaranteed to the limits specified in table 1.
Group A testing only.
Pre and post irradiation limits are identical to those listed under electrical
characteristics. These parts may be dose rate sensitive in a space environment and
demonstrate enhanced low dose rate effect. Radiation end point limits for the noted
parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method
1019.
6
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