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參數(shù)資料
| 型號： | MMVL2105T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 477-02, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | MMVL2105T1G |
MMVL2105T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
30
Vdc
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
A
= 25
°
C)
I
R
0.1
Adc
Diode Capacitance Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
TC
C
280
ppm/
°
C
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMVL2105T1
13.5
15
16.5
400
2.5
2.9
3.2
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
T
measured at 2.0 Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q
2 fC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
1/16”.
4. TC
C
, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc,
f = 1.0 MHz, T
A
= 65
°
C with C
T
at V
R
= 4.0 Vdc,
f = 1.0 MHz, T
A
= +85
°
C in the following equation,
which defines TC
C
:
TCC
CT(
85
°
C) – CT(–65
°
C)
85
65
·
106
CT(25
°
C)
Accuracy limited by measurement of C
T
to
±
0.1 pF.
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| MMVL229AT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE |
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| MMVL3102T1 | 功能描述:變?nèi)荻O管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMVL3102T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
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