參數(shù)資料
型號(hào): MMUN2233LT3
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: TO-236AB, 3 PIN
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 181K
代理商: MMUN2233LT3
MMUN2211LT1 SERIES
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
10
020
30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
V
in
,INPUT
VOL
TAGE
(VOL
TS)
TA = –25°C
75
°C
25
°C
40
50
1
0.1
0.01
0.001
020
40
60
80
IC, COLLECTOR CURRENT (mA)
V
CE(sat)
,MAXIMUM
COLLECT
OR
VOL
TAGE
(VOL
TS)
1000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
TA =75°C
25
°C
–25
°C
TA = –25°C
25
°C
IC/IB = 10
75
°C
25
°C
TA = –25°C
100
10
1
0.1
0.01
0.001
0
123
4
Vin, INPUT VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(mA)
5
678
9
10
50
0
1020
3040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,CAP
ACIT
ANCE
(pF)
75
°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VCE = 10 V
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(MILLIW
A
TTS)
R
θJA = 625°C/W
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. VCE(sat) versus IC
Figure 6. VCE(sat) versus IC
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