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參數(shù)資料
| 型號(hào)： | MMUN2213LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | MMUN2213LT3 |
MMUN2211LT1 Series
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
100
10
1
0.1
0.01
0.001
0
123
4
Vin, INPUT VOLTAGE (VOLTS)
5
678
9
10
VO = 5 V
I C,
COLLECT
OR
CURRENT
(mA)
TA = 25°C
75
°C
25
°C
1000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
50
0
1020
3040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VCE = 10 V
Figure 1. Derating Curve
250
200
150
100
50
0
50
0
50
100
150
TA, AMBIENT TEMPERATURE (5°C)
Figure 2. VCE(sat) vs. IC
P
D,
POWER
DISSIP
A
TION
(MILLIW
A
TTS)
C
ob,
CAP
ACIT
ANCE
(pF)
h
FE,
DC
CURRENT
GAIN
(NORMALIZED)
RθJA= 625°C/W
TA = 75°C
25
°C
25
°C
10
020
30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
40
50
Figure 3. DC Current Gain
V
in,
INPUT
VOL
T
AGE
(VOL
TS)
TA = 25°C
75
°C
25
°C
VO = 0.2 V
1
0.1
0.01
0.001
020
40
60
80
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
V
CE(sat),
MAXIMUM
COLLECT
OR
VOL
T
AGE
(VOL
TS)
TA = 25°C
75
°C
25
°C
Figure 4. Output Capcitance
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2213LT3G | 制造商:ON Semiconductor 功能描述: |
| MMUN2213RLT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2214 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2214L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
| MMUN2214LT1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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