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參數(shù)資料
| 型號： | MMUN2212LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 104K |
| 代理商： | MMUN2212LT3 |
MMUN2211LT1 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance Junction-to-Ambient (surface mounted)
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ, Tstg
65 to +150
°C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current
MMUN2211LT1
(VEB = 6.0 V, IC = 0)
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
I
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMUN2211LT1
(VCE = 10 V, IC = 5.0 mA)
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
hFE
35
60
80
160
3.0
8.0
15
80
160
60
100
140
350
5.0
15
30
200
150
350
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2238LT1
VCE(sat)
0.25
Vdc
2. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2213LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2238LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2233LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2232LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2234LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2212LT3G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2212RLT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2213 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor NPN Silicon |
| MMUN2213L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 47 k, R2 = 47 k |
| MMUN2213LT1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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