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參數(shù)資料
| 型號(hào)： | MMUN2113LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | MMUN2113LT3G |
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MMUN2111LT1G Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device*
Package
Marking
R1 (K)
R2 (K)
Shipping
MMUN2111LT1G
MMUN2111LT3G
SOT23
A6A
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1G
SOT23
A6B
22
3000/Tape & Reel
MMUN2113LT1G
MMUN2113LT3G
SOT23
A6C
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1G
MMUN2114LT3G
SOT23
A6D
10
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1G
SOT23
A6E
10
∞
3000/Tape & Reel
MMUN2116LT1G
SOT23
A6F
4.7
∞
3000/Tape & Reel
MMUN2130LT1G (Note 3)
SOT23
A6G
1.0
3000/Tape & Reel
MMUN2131LT1G (Note 3)
SOT23
A6H
2.2
3000/Tape & Reel
MMUN2132LT1G
SOT23
A6J
4.7
3000/Tape & Reel
MMUN2133LT1G
SOT23
A6K
4.7
47
3000/Tape & Reel
MMUN2134LT1G (Note 3)
SOT23
A6L
22
47
3000/Tape & Reel
*The “G’’ suffix indicates PbFree package available.
3. New devices. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current
MMUN2111LT1G
(VEB = 6.0 V, IC = 0)
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2134LT1G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2131LT1G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2130LT1G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2113LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2216LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2113RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2114 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2114L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
| MMUN2114LT1 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2114LT1 WAF | 制造商:ON Semiconductor 功能描述: |
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