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參數(shù)資料
| 型號(hào)： | MMT08B350T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| 中文描述： | 400 V, 32 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C, SMT, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | MMT08B350T3 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 1
1
Publication Order Number:
MMT08B350T3/D
MMT08B350T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakovertriggered crowbar
protectors. Turnoff occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 80 Amps 10 x 1000 sec, for
Controlled Temperature Environments
The MMT08B350T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in NonSemiconductor
Devices
FailSafe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized File #E210057
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
OffState Voltage Maximum
V
DM
300
V
Maximum Pulse Surge Short Circuit Current
NonRepetitive
Double Exponential Decay Waveform
(25
°
C Initial Temperature) (Notes 1 and 2)
2 x 10 sec
8 x 20 sec
10 x 160 sec
10 x 360 sec
10 x 560 sec
10 x 700 sec
10 x 1000 se
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
±
250
±
250
±
150
±
150
±
100
±
100
±
80
A(pk)
NonRepetitive Peak OnState Current 60 Hz
Full Sign Wave
I
TSM
32
A(pk)
Maximum NonRepetitive Rate of Change of
OnState Current Exponential Waveform,
< 100 A
di/dt
300
A/ s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
80 AMP SURGE, 350 VOLTS
MT1
MT2
(
)
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMT08B350T3
SMB
2500/Tape and Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT08B350T3G
SMB
(PbFree)
2500/Tape and Reel
SMB
(No Polarity)
(Essentially JEDEC DO214AA)
CASE 403C
A
Y
WW
RPCM = Device Code
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
= Work Week
MARKING DIAGRAM
AYWW
RPCM
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| MMT08B350T3G | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT10B350T3 | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT10B350T3G | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMT08B350T3G | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 80A Surge 350V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT100J224 | 制造商:Nissei Electronics 功能描述: |
| MMT100J684 | 制造商:Nissei Electronics 功能描述: |
| MMT-102-01-F-DH | 制造商:Samtec Inc 功能描述:2MM SMT STRIPS - Bulk |
| MMT-102-01-F-DH-A | 制造商:Samtec Inc 功能描述:2MM SMT STRIPS - Bulk |
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