參數(shù)資料
型號： MMST5401-7-F
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 205K
代理商： MMST5401-7-F
DS30170 Rev. 8 - 2
2 of 4
MMST5401
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-160
-150
-5.0
V
V
V
nA
μ
A
nA
I
C
= -100
μ
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100
°
C
V
EB
= -3.0V, I
C
= 0
Collector Cutoff Current
I
CBO
-50
Emitter Cutoff Current
I
EBO
-50
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
50
60
50
240
-0.2
-0.5
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
= -10V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -200
μ
A,
R
S
= 10
,
f = 1.0kHz
Small Signal Current Gain
h
fe
40
200
Current Gain-Bandwidth Product
f
T
100
300
MHz
Noise Figure
NF
8.0
dB
Ordering Information
(Note 4 & 6)
Device
Packaging
SOT-323
Shipping
3000/Tape & Reel
MMST5401-7-F
Notes: 4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration test pulse used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4M
Y
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
相關(guān)PDF資料
PDF描述
MMST5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST5551-7-F NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST6427-7-F NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMST6427-7 NPN SURFACE MOUNT DARLINGTON TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST5401-T 功能描述:兩極晶體管 - BJT -200mA 150V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5401-TP 功能描述:兩極晶體管 - BJT -200mA 150V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5424 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23VAR
MMST5551 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST5551_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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