參數(shù)資料
型號： MMST4403-7-F
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 82K
代理商： MMST4403-7-F
DS30083 Rev. 6 - 2
2 of 5
MMST4403
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
-40
-40
-5.0
V
V
V
nA
nA
I
C
= -100 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100 A, I
C
= 0
V
CE
= -35V, V
EB(OFF)
= -0.4V
V
CE
= -35V, V
EB(OFF)
= -0.4V
-100
-100
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
30
60
100
100
20
300
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.40
-0.75
-0.95
-1.30
V
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.75
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
8.5
30
15
8.0
500
100
pF
pF
k
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
1.5
0.1
60
1.0
V
= -10V, I
C
= -1.0mA,
f = 1.0kHz
x 10
-4
S
Current Gain-Bandwidth Product
f
T
200
MHz
V
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
15
20
225
30
ns
ns
ns
ns
V
CC
= -30V, I
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
V
CC
= -30V, I
= -150mA,
I
B1
= I
B2
= -15mA
Ordering Information
(Note 4 & 6)
Device
Packaging
SOT-323
Shipping
3000/Tape & Reel
MMST4403-7-F
Notes: 4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration test pulse used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3T
Y
K3T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST4403-T 功能描述:兩極晶體管 - BJT -600mA -40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST4403T146 功能描述:兩極晶體管 - BJT PNP 40V 0.6V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST4403T246 制造商:ROHM SEMICONDUCTOR 功能描述:TRANS GP BJT PNP 40V 0.6A 3P TR
MMST4403-TP 功能描述:兩極晶體管 - BJT -600mA -40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5086 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | SOT-23VAR
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