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參數(shù)資料
| 型號： | MMST4126 |
| 廠商： | Diodes Inc. |
| 英文描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 進步黨小信號晶體管表面貼裝 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MMST4126 |
DS30161 Rev. B-1
2 of 2
MMST4126
N
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-25
-25
-4.0
V
V
V
nA
nA
I
C
= -10 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -20V, I
E
= 0V
V
EB
= -3.0V, I
C
= 0V
-50
-50
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
120
60
360
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
-0.40
-0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
4.5
10
pF
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
= 1.0V, I
C
= -2.0mA,
f = 1.0kHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
= -100 A,
R
S
= 1.0k
f = 1.0kHz
Small Signal Current Gain
h
fe
120
480
Current Gain-Bandwidth Product
f
T
250
MHz
Noise Figure
NF
4.0
dB
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMST4126 BULK | 制造商:ROHM 功能描述:SWITCHING PNP SMD (Surface Mount) Transistor SOT-23 制造商:ROHM 功能描述:SWITCHING PNP SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500. |
| MMST4126_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST4126_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST4126-7 | 功能描述:兩極晶體管 - BJT -25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMST4126-7-F | 功能描述:兩極晶體管 - BJT -25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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