參數資料
型號： MMST3904-7-F
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數： 2/4頁
文件大?。?/td> 438K
代理商： MMST3904-7-F
DS30082 Rev. 10 - 2
2 of 4
MMST3904
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
60
40
5.0
V
V
V
nA
nA
I
C
= 10
m
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10
m
A, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
50
50
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
40
70
100
60
30
300
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.25
0.30
V
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
0.85
0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
4.0
8.0
10
8.0
400
40
pF
pF
k
W
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
1.0
0.5
100
1.0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
m
S
Current Gain-Bandwidth Product
f
T
300
MHz
V
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100
m
A,
R
S
= 1.0k
W,
f = 1.0kHz
Noise Figure
NF
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
t
d
t
r
35
35
ns
ns
V
CC
= 3.0V, I
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Ordering Information
(Note 4 and 6)
Device
Packaging
SOT-323
Shipping
3000/Tape & Reel
MMST3904-7-F
Notes: 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
K2N
YM
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
相關PDF資料
PDF描述
MMST4124-7-F NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST4126-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST4403-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
相關代理商/技術參數
參數描述
MMST3904-G 制造商:Comchip Technology Corporation 功能描述:
MMST3904-T 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST3904T146 功能描述:兩極晶體管 - BJT GP NPN 40V 20MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST3904-T146 制造商:ROHM Semiconductor 功能描述:200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMST3904-TP 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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