參數(shù)資料
型號： MMST2907A-7-F
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 81K
代理商： MMST2907A-7-F
DS30081 Rev. 8 - 2
2 of 4
MMST2907A
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-60
-60
-5.0
V
V
V
nA
A
nA
nA
I
C
= -10 A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125 C
V
CE
= -30V, V
EB(OFF)
= -0.5V
V
CE
= -30V, V
EB(OFF)
= -0.5V
Collector Cutoff Current
I
CBO
-10
Collector Cutoff Current
Base Cutoff Current
I
CEX
I
BL
-50
-50
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
75
100
100
100
50
300
I
C
= -100μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.4
-1.6
-1.3
-2.6
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0
30
pF
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
V
= -20V, I
C
= -50mA,
f = 100MHz
—
Current Gain-Bandwidth Product
f
T
200
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
t
on
t
d
t
r
t
off
t
s
t
f
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
V
CC
= -6.0V, I
= -150mA,
I
B1
= I
B2
= -15mA
Notes: 5. Short duration test pulse used to minimize self-heating effect.
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST2907A-T 功能描述:兩極晶體管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907AT146 功能描述:兩極晶體管 - BJT PNP 60V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-TP 功能描述:兩極晶體管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-TP-TR 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin SOT-323 T/R
MMST3904 制造商:ROHM 功能描述:3904 ROHM SMT T/R LOC:S2C7A 制造商:Diodes Incorporated 功能描述: 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-323
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