參數(shù)資料
型號(hào): MMSF7N03HDR2
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 8.2 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 255K
代理商: MMSF7N03HDR2
MMSF7N03HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.5
0.75
2
0
4
5
7
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1.5
2
2.5
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
24
10
0.4
0.5
0.6
0
5
10
15
0.01
0.04
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
1
1.5
2
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
ID = 3.5 A
1
1.25
4.5 V
3.9 V
3.1 V
2.9 V
3
1.5
1.75
3.5
0.3
68
10 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
6
0.05
0.03
3
0
0.5
510
20
30
4
5
7
6
3
0.2
0.02
10
100
°C
25
°C
ID = 3.5 A
3.7 V
3.5 V
3.3 V
2.7 V
2.5 V
2
1
TJ = 25°C
2
1
0.1
TJ = 25°C
0.1
10000
15
25
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