參數(shù)資料
型號(hào): MMSF5P02HDR2
廠商: ON SEMICONDUCTOR
元件分類(lèi): 小信號(hào)晶體管
英文描述: 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: CASE 751-07, SOP-8
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 277K
代理商: MMSF5P02HDR2
MMSF5P02HD
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Max
Unit
DraintoSource Voltage
VDSS
20
V
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
20
V
GatetoSource Voltage Continuous
VGS
± 8.0
V
1″ SQ.
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 2)
RTHJA
PD
ID
IDM
50
2.5
20
8.7
7.0
43.5
°C/W
Watts
mW/°C
A
Minimum
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 2)
RTHJA
PD
ID
IDM
80
1.56
12.5
6.9
5.5
35
°C/W
Watts
mW/°C
A
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W)
EAS
1000
mJ
1. Negative sign for PChannel devices omitted for clarity.
2. Repetitive rating; pulse width limited by maximum junction temperature.
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