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參數(shù)資料
| 型號： | MMSF4205R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-06, SO-8 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 256K |
| 代理商： | MMSF4205R2 |
MMSF4205
http://onsemi.com
5
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Rg, GATE RESISTANCE (OHMS)
110
1
100
10
t,TIME
(ns)
TJ = 25°C
ID = 10 A
VDD = 10 V
VGS = 4.5 V
tr
td(on)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
10
V
GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
2
0
1
0
Qg, TOTAL GATE CHARGE (nC)
V
DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
5
10
20
40
TJ = 25°C
VGS = 4.5 V
VDS = 10 V
ID = 10 A
30
VDS
VGS
Q2
Q3
Q1
70
1000
tf
3
2
4
6
4
8
QT
50
td(off)
60
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr,
due to the storage of minority carrier charge, QRR, as
shown in the typical reverse recovery wave form of Figure
16. It is this stored charge that, when cleared from the
diode, passes through a potential and defines an energy
loss. Obviously, repeatedly forcing the diode through
reverse recovery further increases switching losses.
Therefore, one would like a diode with short trr and low QRR
specifications to minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon
by high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal
and values less than 0.5 are considered snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse
recovery characteristic. The softness advantage of the high
cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
0
0.2
0.4
0.6
1.0
0
1
2
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
4
VGS = 0 V
TJ = 25°C
3
0.8
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