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參數(shù)資料
| 型號： | MMSF2P02ER2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 247K |
| 代理商： | MMSF2P02ER2 |
Publication Order Number:
MMSF2P02E/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 6
1
MMSF2P02E
Preferred Device
Power MOSFET
2 Amps, 20 Volts
PChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. MiniMOS
t
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dcdc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
IDSS Specified at Elevated Temperature
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
GatetoSource Voltage Continuous
VGS
± 20
Vdc
Drain Current
Continuous @ TA = 100°C
Single Pulse (tp ≤ 10 μs)
ID
IDM
2.5
1.7
13
Adc
Apk
Total Power Dissipation @ TA = 25°C
(Note 2.)
PD
2.5
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
IL = 6.0 Apk, L = 12 mH, RG = 25 Ω)
EAS
216
mJ
Thermal Resistance Junction to Ambient
(Note 2.)
RθJA
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
1. Negative sign for PChannel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
D
S
G
PChannel
NC
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
1
8
2 AMPERES
20 VOLTS
RDS(on) = 250 mW
Device
Package
Shipping
ORDERING INFORMATION
MMSF2P02ER2
SO8
2500 Tape & Reel
SO8
CASE 751
STYLE 13
http://onsemi.com
LYWW
MARKING
DIAGRAM
S4P01
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
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