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參數(shù)資料
| 型號(hào)： | MMSF1310R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 243K |
| 代理商： | MMSF1310R2 |
MMSF1310
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
27
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.3
4.4
2.5
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
9.5
12.5
15
19
m
gFS
5.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0V
Ciss
1440
2020
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
680
960
Transfer Capacitance
f = 1.0 MHz)
Crss
195
280
SWITCHING CHARACTERISTICS (Note 4.)
TurnOn Delay Time
td(on)
10
20
ns
Rise Time
(VDD = 24 Vdc, ID = 10 Adc,
VGS =10Vdc
tr
36
72
TurnOff Delay Time
VGS = 10 Vdc,
td(off)
82
164
Fall Time
RG
6.0
) (Note 3.)
tf
95
190
Gate Charge
QT
48
68
nC
(VDS = 15 Vdc, ID = 10 Adc,
Q1
3.0
(VDS
15 Vdc, ID
10 Adc,
Q2
4.0
Q3
7.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 10 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.82
0.67
1.0
Vdc
Reverse Recovery Time
trr
52
ns
(IS = 10 Adc, VGS = 0 Vdc,
ta
23
(IS
10 Adc, VGS
0 Vdc,
tb
30
Reverse Recovery Stored Charge
QRR
0.05
C
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
6. Repetitive rating; pulse width limited by maximum junction temperature.
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