參數(shù)資料
型號: MMPQ2907AR1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SO-16
文件頁數(shù): 12/22頁
文件大?。?/td> 296K
代理商: MMPQ2907AR1
MMPQ2907 MMPQ2907A
2–433
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100 Adc, VCE = –10 Vdc)
MMPQ2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMPQ2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
(IC = –150 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
(IC = –300 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
(IC = –500 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
hFE
75
100
75/100
100
30/50
50
300
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
MMPQ2907
(IC = –300 mAdc, IB = –30 mAdc)
MMPQ2907
(IC = –500 mAdc, IB = –50 mAdc)
MMPQ2907
VCE(sat)
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
MMPQ2907
(IC = –300 mAdc, IB = –30 mAdc)
MMPQ2907
(IC = –500 mAdc, IB = –50 mAdc)
MMPQ2907A
VBE(sat)
–1.3
–2.6
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
350
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
6.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cib
20
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc)
ton
30
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc)
toff
100
ns
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle = 2.0%.
相關PDF資料
PDF描述
MMPQ6842 200 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ6842R2 200 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ6842R1 200 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MMSF10N03ZR2 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMSF1308 7000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
MMPQ3467 功能描述:兩極晶體管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ3725 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor
MMPQ3725 WAF 制造商:ON Semiconductor 功能描述:
MMPQ3904 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ3904_Q 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2