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參數(shù)資料
| 型號： | MMPQ2907 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | MMPQ2907 |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
MMPQ2907
MMPQ2907A
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCB
60
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
Each
Transistor
Four Transistors
Equal Power
Total Power Dissipation
@ TA = 25
0C
Derate above 25
0C
PD
0.52
4.2
1.0
8.0
W
mW/
0C
Total Power Dissipation
@ TC = 25
0C
Derate above 25
0C
PD
0.8
6.4
2.4
19.2
W
mW/
0C
Operating & Storage Junction Temp. Range
TJ, Tstg
-55 to +150
0C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(1)
IC = 10 mAdc, IB = 0
MMPQ2907
MMPQ2907A
V(BR)CEO
40
60
-
Vdc
Collector-Base Breakdown Voltage
IC = 10 Adc, IE = 0
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage
IE = 10 Adc, IC = 0
V(BR)EBO
5.0
-
Vdc
Collector Cutoff Current
VCB = 30 Vdc, IE = 0
MMPQ2907
VCB = 50 Vdc, IE = 0
MMPQ2907A
ICBO
-
50
10
ηAdc
Emitter Cutoff Current
VCB = 3.0 Vdc, IC = 0
IEBO
--
50
ηAdc
ON CHARACTERISTICS
DC Current Gain
(1)
IC = 100 Adc, VCE = 10 Vdc
MMPQ2907A
IC = 1.0 mAdc, VCE = 10 Vdc
MMPQ2907A
IC = 10 mAdc, VCE = 10 Vdc
MMPQ2907, MMPQ2907A
IC = 150 mAdc, VCE = 10 Vdc
MMPQ2907, MMPQ2907A
IC = 300 mAdc, VCE = 10 Vdc
MMPQ2907, MMPQ2907A
IC = 500 mAdc, VCE = 10 Vdc
MMPQ2907, MMPQ2907A
hFE
75
100
75/100
100
30/50
50
-
300
-
MMPQ2907, MMPQ2907A
SOIC
16 PIN QUAD
NPN GENERAL PURPOSE QUAD TRANSISTOR
600 mAMPERE
40 – 60 VOLTS
0.52-8.0 WATTS
TECHNICAL DATA
MMPQ2907
MMPQ2907A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ2907_Q | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907A | 功能描述:兩極晶體管 - BJT PNP Gen Purpose Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907A_Q | 功能描述:兩極晶體管 - BJT PNP Gen Purpose Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3467 | 功能描述:兩極晶體管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3725 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
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