參數(shù)資料
型號: MMJT9410T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 10 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, CASE 318E, 4 PIN
文件頁數(shù): 1/6頁
文件大小: 115K
代理商: MMJT9410T1
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 4
738
Publication Order Number:
MMJT9410/D
MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Collector Emitter Sustaining Voltage
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain
hFE
= 85 (Min) @ IC = 0.8 Adc
= 60 (Min) @ IC = 3.0 Adc
Low Collector Emitter Saturation Voltage
VCE(sat)= 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc
SOT223 Surface Mount Packaging
Epoxy Meets UL94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MMJT9410T1
SOT223
1000 / Tape &
Reel
SOT223
CASE 318E
Style 1
MARKING
DIAGRAM
AYM
9410
= Specific Device Code
A
= Assembly Location
Y
= Last Digit of Year
M
= Month Code
Schematic
C 2,4
B 1
E 3
Top View Pinout
C
CE
B
4
12
3
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMJT9410T1G 功能描述:兩極晶體管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon
MMJT9435T1 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435T1G 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435T3 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2