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參數(shù)資料
| 型號： | MMJT350T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Bipolar Power Transistors |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | PLASTIC, CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | MMJT350T1 |
MMJT350T1
http://onsemi.com
3
V
θ
°
I
C
, COLLECTOR CURRENT (mA)
h
200
7.0
20
5.0
50
30
10
10
50
100
30
25
°
C
T
J
= 150
°
C
55
°
C
Figure 1. DC Current Gain
100
20
70
200
500
300
70
V
CE
= 2.0 V
V
CC
= 10 V
Figure 2. “On” Voltages
1.0
I
C
, COLLECTOR CURRENT (mA)
0.8
0.2
0
T
J
= 25
°
C
V
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 10 V
0.6
0.4
V
CE(sat)
7.0
20
5.0
10
50
100
30
200
500
300
70
I
C
/I
B
= 10
I
C
/I
B
= 5.0
1000
700
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
70
50
300
10
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
SECOND BREAKDOWN LIMITED
Figure 3. ActiveRegion Safe Operating Area
1.0ms
dc
200
100
50
20
T
J
= 150
°
C
I
100
300
500
30
100 s
400
30
70
200
20
500 s
+1.2
I
C
, COLLECTOR CURRENT (mA)
70
Figure 4. Temperature Coefficients
50
30
10
5.0
500
7.0
20
+0.8
+0.4
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
100
200 300
*APPLIES FOR I
C
/I
B
< h
FE/4
*
VC
for V
CE(sat)
VB
for V
BE
+100
°
C to +150
°
C
+25
°
C to +100
°
C
55
°
C to +25
°
C
+25
°
C to +150
°
C
55
°
C to +25
°
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150
°
C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 5. Power Derating
150
25
T, TEMPERATURE (
°
C)
4.0
3.0
2.0
1.0
0
P
D
50
,
75
100
125
T
A
T
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT350T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon |
| MMJT350T1G | 功能描述:兩極晶體管 - BJT 0.5A 30V 2.75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9410 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors NPN Silicon |
| MMJT9410G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors NPN Silicon |
| MMJT9410T1 | 功能描述:兩極晶體管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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