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參數(shù)資料
| 型號： | MMG3003NT1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier |
| 中文描述： | 異質(zhì)結雙極晶體管技術（InGaP HBT寬頻）寬帶高線性放大器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 333K |
| 代理商： | MMG3003NT1 |
MMG3003NT1
6-1
Freescale Semiconductor
RF Product Device Data
MMG3003NT1
40-3600 MHz, 20 dB
24 dBm
InGaP HBT
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3003NT1 is a General Purpose Amplifier that is internally
input matched and internally output prematched. It is designed for a broad
range of Class A, small-signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 3600 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small-signal RF.
Features
Frequency: 40-3600 MHz
P1dB: 24 dBm @ 900 MHz
Small-Signal Gain: 20 dB @ 900 MHz
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
Single Voltage Supply
Internally Matched to 50 Ohms
Low Cost SOT-89 Surface Mount Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
123
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
G
p
20
16.9
12
dB
Input Return Loss
(S11)
IRL
-15
-14.1
-11.2
dB
Output Return Loss
(S22)
ORL
-9.3
14.5
-10.2
dB
Power Output @1dB
Compression
P1db
24
23.3
20.5
dBm
Third Order Output
Intercept Point
1. V
CC
=
6.2 Vdc, T
C
= 25
°
C, 50 ohm system
IP3
40.5
40
37
dBm
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
(2)
V
CC
7
V
Supply Current
(2)
I
CC
400
mA
RF Input Power
P
in
15
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Junction Temperature
(3)
T
J
150
°
C
2. Voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150
°
C.
Table 3. Thermal Characteristics
(V
CC
= 6.2 Vdc, I
CC
= 180 mA, T
C
= 25
°
C)
Characteristic
Symbol
Value
(4)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
31.6
°
C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3003NT1
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMG3003NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3003NT1_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology |
| MMG3004NT1 | 功能描述:射頻放大器 27DBM 16.5DB GPA 5X5PQFN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MMG3004NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3005NT1 | 功能描述:射頻放大器 30DBM 15DB GPA 5X5 PQFN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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