參數(shù)資料
型號(hào)： MMDT5451
廠商： Diodes Inc.
英文描述： COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 互補(bǔ)NPN /進(jìn)步黨小信號(hào)晶體管表面貼裝
文件頁數(shù)： 2/2頁
文件大小： 45K
代理商： MMDT5451
DS30171 Rev. C-1
2 of 2
MMDT5451
N
Electrical Characteristics, NPN 5551 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
180
160
6.0
V
V
V
nA
A
nA
I
C
= 100 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100 C
V
EB
= 4.0V, I
C
= 0
Collector Cutoff Current
I
CBO
50
Emitter Cutoff Current
I
EBO
50
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
80
80
30
250
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.15
0.20
V
Base- Emitter Saturation Voltage
V
BE(SAT)
1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
= 200 A,
R
S
= 1.0k
f = 1.0kHz
Small Signal Current Gain
h
fe
50
250
Current Gain-Bandwidth Product
f
T
100
300
MHz
Noise Figure
NF
8.0
dB
Electrical Characteristics, PNP 5401 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-160
-150
-5.0
V
V
V
nA
A
nA
I
C
= -100 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100 C
V
EB
= -3.0V, I
C
= 0
Collector Cutoff Current
I
CBO
-50
Emitter Cutoff Current
I
EBO
-50
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
50
60
50
240
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.2
-0.5
V
Base- Emitter Saturation Voltage
V
BE(SAT)
-1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
= -10V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
= -200 A,
R
S
= 10
f = 1.0kHz
Small Signal Current Gain
h
fe
40
200
Current Gain-Bandwidth Product
f
T
100
300
MHz
Noise Figure
NF
8.0
dB
Notes:
3. Pulse test: Pulse width
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT5451_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451-7 功能描述:兩極晶體管 - BJT 160 / 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5451-7-F 功能描述:兩極晶體管 - BJT 160 / 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5551 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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