參數(shù)資料
型號(hào)： MMDT4413-7-F
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 463K
代理商： MMDT4413-7-F
DS30121 Rev. 8 - 2
2 of 5
www.diodes.com
MMDT4413
Diodes Incorporated
Electrical Characteristics, NPN 4401 Section
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
60
40
6.0
100
100
V
V
V
nA
nA
I
C
= 100
μ
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 35V, V
EB(OFF)
= 0.4V
V
CE
= 35V, V
EB(OFF)
= 0.4V
DC Current Gain
h
FE
20
40
80
100
40
300
0.40
0.75
0.95
1.2
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
V
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
1.0
0.1
40
1.0
6.5
30
15
8.0
500
30
pF
pF
k
Ω
x 10
-4
μ
S
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
MHz
V
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
15
20
225
30
ns
ns
ns
ns
V
CC
= 30V, I
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
V
CC
= 30V, I
= 150mA,
I
B1
= I
B2
= 15mA
Electrical Characteristics, PNP 4403 Section
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
-40
-40
-5.0
-100
-100
V
V
V
nA
nA
I
C
= -100
μ
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100
μ
A, I
C
= 0
V
CE
= -35V, V
EB(OFF)
= -0.4V
V
CE
= -35V, V
EB(OFF)
= -0.4V
DC Current Gain
h
FE
30
60
100
100
20
300
-0.40
-0.75
-0.95
-1.30
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.75
V
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
1.5
0.1
60
1.0
8.5
30
15
8.0
500
100
pF
pF
k
Ω
x 10
-4
μ
S
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
200
MHz
V
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
4.
t
d
t
r
t
s
t
f
15
20
225
30
ns
ns
ns
ns
V
CC
= -30V, I
C
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
V
CC
= -30V, I
= -150mA,
I
B1
= I
B2
= -15mA
Short duration pulse test used to minimize self-heating effect.
相關(guān)PDF資料
PDF描述
MMDT5401-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451-7-F COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5451 COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5551-7-F DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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