參數(shù)資料
型號： MMDT4146
廠商： Diodes Inc.
英文描述： COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 互補(bǔ)NPN /進(jìn)步黨小信號晶體管表面貼裝
文件頁數(shù)： 2/2頁
文件大?。?/td> 60K
代理商： MMDT4146
DS30162 Rev. D-1
2 of 2
MMDT4146
N
Electrical Characteristics, NPN 4124 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
30
25
5.0
V
V
V
nA
nA
I
C
= 10 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 20V, I
E
= 0V
V
EB
= 3.0V, I
C
= 0V
6.0
50
50
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
120
60
360
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 50mA, I
B
= 5.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
0.30
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
4.0
8.0
pF
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
V
= 20V, I
C
= 10mA,
f = 100MHz
Small Signal Current Gain
h
fe
120
480
Current Gain-Bandwidth Product
f
T
300
MHz
Electrical Characteristics, PNP 4126 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-25
-25
-4.0
V
V
V
nA
nA
I
C
= -10 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -20V, I
E
= 0V
V
EB
= -3.0V, I
C
= 0V
-50
-50
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
120
60
360
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
-0.40
-0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
4.5
10
pF
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
= -100 A,
R
S
= 1.0k
f = 1.0kHz
Small Signal Current Gain
h
fe
120
480
Current Gain-Bandwidth Product
f
T
250
MHz
Noise Figure
NF
4.0
dB
Notes:
3. Pulse test: Pulse width
300 s, duty cycle
2%.
相關(guān)PDF資料
PDF描述
MMDT4401-7-F DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4403-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4413-7-F COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT4146_09 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4146_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4146-7 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT4146-7-F 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT4401 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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