參數(shù)資料
型號(hào)： MMDT4146-7-F
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 200 mA, 25 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù)： 2/5頁
文件大?。?/td> 84K
代理商： MMDT4146-7-F
DS30162 Rev. 9 - 2
2 of 5
MMDT4146
www.diodes.com
Electrical Characteristics, NPN 4124 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
30
25
5.0
V
V
V
nA
nA
I
C
= 10 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 20V, I
E
= 0V
V
EB
= 3.0V, I
C
= 0V
6.0
50
50
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
120
60
360
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 50mA, I
B
= 5.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
0.30
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
4.0
8.0
pF
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
V
= 20V, I
C
= 10mA,
f = 100MHz
Small Signal Current Gain
h
fe
120
480
Current Gain-Bandwidth Product
f
T
300
MHz
Electrical Characteristics, PNP 4126 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-25
-25
-4.0
V
V
V
nA
nA
I
C
= -10 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -20V, I
E
= 0V
V
EB
= -3.0V, I
C
= 0V
-50
-50
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
120
60
360
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
-0.40
-0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
4.5
10
pF
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
= -100 A,
R
S
= 1.0k
f = 1.0kHz
Small Signal Current Gain
h
fe
120
480
Current Gain-Bandwidth Product
f
T
250
MHz
Noise Figure
NF
4.0
dB
Ordering Information
Device
Packaging
SOT-363
Shipping
3000/Tape & Reel
MMDT4146-7-F
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 5)
相關(guān)PDF資料
PDF描述
MMDT4146 COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4401-7-F DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4403-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4413-7-F COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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