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參數(shù)資料
| 型號(hào)： | MMDT4126-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 25 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 73K |
| 代理商： | MMDT4126-7-F |
DS30160 Rev. 8 - 2
2 of 4
MMDT4126
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-25
-25
-4.0
V
V
V
nA
nA
I
C
= -10 A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -20V, I
E
= 0V
V
EB
= -3.0V, I
C
= 0V
-50
-50
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
120
60
360
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
-0.40
-0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
4.5
10
pF
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100 A,
R
S
= 1.0k
f = 1.0kHz
Small Signal Current Gain
h
fe
120
480
Current Gain-Bandwidth Product
f
T
250
MHz
Noise Figure
NF
4.0
dB
Ordering Information
(Note 5)
Device
Packaging
SOT-363
Shipping
3000/Tape & Reel
MMDT4126-7-F
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B
K
YM
Y
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
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PDF描述 |
|---|---|
| MMDT4126 | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146-7-F | COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146 | COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4401-7-F | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT4146 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT4146-7-F | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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