- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382340 > MMDT3906V-7 (DIODES INC) DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MMDT3906V-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 80K |
| 代理商： | MMDT3906V-7 |
Pb
Lead-free
DS30467 Rev. 6 - 2
1 of 4
MMDT3906V
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
L
B C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 20
Terminals: Lead bearing terminal plating available. See
Ordering information Page 4, Note 6
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.003 grams (approximate)
MMDT3906V
DUAL PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
Value
-40
-40
-5.0
-200
150
833
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
C/W
C
SOT-563
Min
Dim
A
B
C
D
G
H
K
L
M
Max
Typ
0.15
0.30
0.25
1.10
1.25
1.20
1.55
1.70
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.56
0.60
0.60
0.10
0.30
0.20
0.10
0.18
0.11
All Dimensions in mm
SEE NOTE 2
C
1
B
2
E
2
C
2
E
1
B
1
N
Notes:
1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Thermal Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
P
d
R
JA
Value
150
833
Unit
mW
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDT3906V-7-L | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMFT2406T1 | Power MOSFET |
| MMFT2406T1G | Power MOSFET |
| MMFT2406T3 | Power MOSFET |
| MMFT2406T3G | Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT3906V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.2A 6PIN SOT-563 - Tape and Reel |
| MMDT3906V-7-L | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3906VC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3906VC-7 | 功能描述:兩極晶體管 - BJT BIPOLAR TRANSISTOR DUAL PNP SOT-563 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT3906V-T | 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。