參數(shù)資料
型號(hào)： MMDT3904VC
廠商： Diodes Inc.
英文描述： DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 雙npn型小信號(hào)晶體管表面貼裝
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 173K
代理商： MMDT3904VC
DS30636 Rev. 3 - 2
2 of 3
MMDT3904VC
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
60
40
5.0
50
50
V
V
V
nA
nA
I
C
= 10
μ
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
40
70
100
60
30
300
0.20
0.30
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
0.85
0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
1.0
0.5
100
1.0
4.0
8.0
10
8.0
400
40
pF
pF
k
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
μ
S
Current Gain-Bandwidth Product
f
T
300
MHz
V
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
= 100
μ
A,
R
S
= 1.0k
,
f = 1.0kHz
Noise Figure
NF
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
35
35
200
50
ns
ns
ns
ns
V
CC
= 3.0V, I
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
= 10mA,
I
B1
= I
B2
= 1.0mA
Notes:
6. Short duration test pulse used to minimize self-heating.
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Date Code Key
Marking Information
APK = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
C
U
D
O
R
P
W
E
N
APK YM
Year
Code
2005
S
2006
T
2007
U
2008
V
2009
W
相關(guān)PDF資料
PDF描述
MMDT3904VC-7 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3904V-7 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT3904VC_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT
MMDT3904VC-7 功能描述:兩極晶體管 - BJT BIPOLAR TRANSISTOR SMLSGNL NPN SOT-563 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3904V-T 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3904V-TP 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3906 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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