參數資料
型號: MMDT3904-7-F
廠商: DIODES INC
元件分類: 小信號晶體管
英文描述: DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述: 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數: 2/4頁
文件大?。?/td> 86K
代理商: MMDT3904-7-F
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
60
50
V
I
C
= 10
μ
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
Collector-Emitter Breakdown Voltage
40
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CEX
I
BL
5.0
V
Collector Cutoff Current
nA
Base Cutoff Current
50
nA
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
40
70
100
60
30
300
I
C
= 100
μ
A, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
0.85
0.95
V
Notes:
3. Short duration pulse test used to minimize self-heating.
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
C
ibo
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Capacitance
8.0
pF
Input Impedance
h
ie
h
re
h
fe
1.0
10
k
Ω
x 10
-4
Voltage Feedback Ratio
0.5
8.0
Small Signal Current Gain
100
400
μ
S
Output Admittance
h
oe
1.0
40
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
MHz
V
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100
μ
A,
R
S
= 1.0k
Ω,
f = 1.0kHz
Noise Figure
NF
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
t
d
35
ns
Rise Time
t
r
t
s
t
f
35
ns
V
CC
= 3.0V, I
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Storage Time
200
ns
Fall Time
50
ns
V
CC
= 3.0V, I
= 10mA,
I
B1
= I
B2
= 1.0mA
DS30088 Rev. 11 - 2
2 of 4
www.diodes.com
MMDT3904
Diodes Incorporated
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