參數(shù)資料
型號: MMDT2227-7-F
廠商: DIODES INC
元件分類: 小信號晶體管
英文描述: COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述: 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: GREEN, PLASTIC PACKAGE-6
文件頁數(shù): 3/4頁
文件大?。?/td> 83K
代理商: MMDT2227-7-F
DS30122 Rev. 8 - 2
3 of 4
MMDT2227
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-60
-60
-5.0
V
V
V
nA
A
nA
nA
I
C
= -10 A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10 A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125 C
V
CE
= -30V, V
EB(OFF)
= -0.5V
V
CE
= -30V, V
EB(OFF)
= -0.5V
Collector Cutoff Current
I
CBO
-10
Collector Cutoff Current
Base Cutoff Current
I
CEX
I
BL
-50
-50
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
75
100
100
100
50
300
I
C
= -100μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.4
-1.6
-1.3
-2.6
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0
30
pF
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
V
= -20V, I
C
= -50mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
200
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
t
off
t
d
t
r
t
off
t
s
t
f
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
V
CC
= -6.0V, I
= -150mA,
I
B1
= I
B2
= -15mA
Electrical Characteristics, 2907A Type (PNP)
@ T
A
= 25 C unless otherwise specified
Note:
4. Short duration test pulse used to minimize self-heating effect.
C
V , REVERSE VOLTAGE (V)
Fig. 3, Typical
Capacitance Characteristics
(2907A Type - PNP)
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
Cobo
Cibo
f = 1
MHz
I , BASE CURRENT (mA)
Fig. 4, Typical Collector Saturation Region
(2907A Type - PNP)
V
,
C
-0.2
0
-0.001
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-0.01
-1
-10
-0.1
-100
I = -1mA
I = -10mA
I = -30mA
I = -100mA
I = -300mA
相關(guān)PDF資料
PDF描述
MMDT2227M COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2227M-7 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A-7-F DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A-7 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT2227A 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2227DW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN+PNP Dual General Purpose Transistors
MMDT2227G-AL6-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN & PNP GENERAL PURPOSE AMPLIFIER
MMDT2227L-AL6-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN & PNP GENERAL PURPOSE AMPLIFIER
MMDT2227M 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR