參數(shù)資料
型號(hào)： MMDT2222A-7-F
廠(chǎng)商： DIODES INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 82K
代理商： MMDT2222A-7-F
DS30125 Rev. 9 - 2
2 of 4
MMDT2222A
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
75
40
6.0
V
V
V
nA
A
nA
nA
nA
I
C
= 10 A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150 C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
Collector Cutoff Current
I
CBO
10
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
I
CEX
I
EBO
I
BL
10
10
20
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
35
50
75
100
40
50
35
300
I
C
= 100 A, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55 C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
1.0
V
Base-Emitter Saturation Voltage
V
BE(SAT)
0.6
1.2
2.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10V, I
C
= 100 A,
R
S
= 1.0k
f = 1.0kHz
—
25
Current Gain-Bandwidth Product
f
T
300
MHz
Noise Figure
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V, I
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 30V, I
= 150mA,
I
B1
= I
B2
= 15mA
Ordering Information
(Note 4)
Device
Packaging
SOT-363
Shipping
3000/Tape & Reel
MMDT2222A-7-F
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1P YM
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
相關(guān)PDF資料
PDF描述
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MMDT2227M COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2227M-7 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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