- 您現在的位置：買賣IC網 > PDF目錄383624 > MMDFS3P303 (ON SEMICONDUCTOR) Power MOSFET 3 Amps, 30 Volts PDF資料下載
參數資料
| 型號： | MMDFS3P303 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 功率MOSFET 3安培，30伏特 |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MMDFS3P303 |
MMDFS3P303
http://onsemi.com
5
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
30
-10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
14
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0
2.5
2.0
1.5
1.0
0.5
0
0.2
0.1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
50
150
25
350
300
50
0
1.0
C
V
400
200
0
-5.0
0
10
4.0
8.0
12
12
10
0.4
0.8
1.0
,
ID
10
1.0
75
100
125
100
EA
15
,
G
t
I
S
100
10
100
10
8.0
150
200
250
A
ID = 3.5 A
TJ = 25
°
C
VGS = 0 V
TJ = 25
°
C
Ciss
Ciss
Coss
Crss
Crss
ID = 3.5 A
TJ = 25
°
C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
VGS = 12 V
SINGLE PULSE
TA = 25
°
C
VGS
VDS
0
25
20
10
20
25
1.0
10 ms
1.0 ms
VGS = 0
VDS = 0
15
5.0
2.0
6.0
10
0.6
450
400
VGS = 10 V
TJ = 25
°
C
ID = 2.0 A
VDD = 15 V
tf
V
,
D
相關PDF資料 |
PDF描述 |
|---|---|
| MMDL101T1 | Schottky Barrier Diode |
| MMDL770T1 | Schottky Barrier Diode |
| MMDL770T1 | Schottky Barrier Diode |
| MMDT2222A-7-F | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222V | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDFS3P303-D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
發(fā)布緊急采購，3分鐘左右您將得到回復。