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參數(shù)資料
| 型號(hào)： | MMDF6N02HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 6.0安培20伏特 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | MMDF6N02HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
20
—
—
24.3
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
2.5
25
μ
Adc
IGSS
—
0.3
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (3)
VGS(th)
0.5
—
0.8
2.86
1.2
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
—
28
42
35
49
m
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
7.0
8.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
10 Vdc V
Ciss
Coss
Crss
—
515
572
pF
Output Capacitance
—
345
372
Transfer Capacitance
—
150
178
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 3.5 Adc,
VGS= 4 0 Vdc
VGS = 4.0 Vdc,
RG = 10
3 5 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
12
15
ns
Rise Time
—
96
103
Turn–Off Delay Time
—
100
108
Fall Time
)
—
130
140
Gate Charge
See Figure 8
(VDS = 16 Vdc,D
(DS
VGS = 4.0 Vdc)
6 0 Ad
—
11
12
nC
—
1.2
—
,
—
6.1
—
—
3.9
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.84
0.77
1.2
—
Vdc
Reverse Recovery Time
(IS = 6.0 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
6 0 Ad
trr
ta
tb
—
102
—
ns
—
36
—
,
—
66
—
Reverse Recovery Stored Charge
QRR
—
0.150
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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| MMDF6N02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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