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參數(shù)資料
| 型號(hào)： | MMDF4207R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 196K |
| 代理商： | MMDF4207R2 |
MMDF4207
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage(1)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
14.9
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)
IDSS
—
1.0
5.0
Adc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage(1)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
—
–2.6
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance(1)
(VGS = 4.5 Vdc, ID = 6.2 Adc)
(VGS = 2.5 Vdc, ID = 5.0 Adc)
RDS(on)
—
22
34
33
50
m
Forward Transconductance (VDS = 10 Vdc, ID = 6.2 Adc)(1)
gFS
—
15
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 Vdc V
0 V
Ciss
—
1210
1694
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
—
560
784
Transfer Capacitance
f = 1.0 MHz)
Crss
—
340
476
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
1 0 Ad
td(on)
—
14
21
ns
Rise Time
(VDS = 10 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
—
20
64
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )(1)
td(off)
—
68
74
Fall Time
G
)
tf
—
84
127
Gate Charge
(V
10 Vd
I
6 2 Ad
QT
—
27
31
nC
(VDS = 10 Vdc, ID = 6.2 Adc,
(1)
Q1
—
4.5
—
( DS
, D
,
VGS = 4.5 Vdc)(1)
Q2
—
11.7
—
Q3
—
9.3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)(1)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.87
0.72
1.2
—
Vdc
Reverse Recovery Time
(I
1 7 Ad
V
0 Vd
trr
—
43
80
ns
(IS = 1.7 Adc, VGS = 0 Vdc,
(1)
ta
—
20
—
( S
,
GS
,
dIS/dt = 100 A/s)(1)
tb
—
23
—
Reverse Recovery Stored Charge
QRR
—
0.04
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Repetitive rating; pulse width limited by max. junction temperature.
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