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參數(shù)資料
| 型號： | MMDF3N02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL |
| 中文描述： | 3.8 A, 20 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MMDF3N02HDR2 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 6
1
Publication Order Number:
MMDF3N02HD/D
MMDF3N02HD
Preferred Device
Power MOSFET
3 Amps, 20 Volts
N–Channel SO–8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ TA = 25
°
C
Drain Current
– Continuous @ TA = 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C
(Note 1.)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
20
20
±
20
3.8
2.6
19
2.0
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak
IL = 9.0 Apk, L = 10
mH, RG = 25
)
Thermal Resistance – Junction to Ambient
(Note 1.)
EAS
405
mJ
R
θ
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with
one die operating, 10 sec. max.
TL
260
°
C
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
1
8
3 AMPERES
20 VOLTS
RDS(on) = 90 m
Device
Package
Shipping
ORDERING INFORMATION
MMDF3N02HDR2
SO–8
2500 Tape & Reel
SO–8, Dual
CASE 751
STYLE 11
http://onsemi.com
N–Channel
LYWW
MARKING
DIAGRAM
D3N02
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
D
S
G
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| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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