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參數(shù)資料
| 型號(hào)： | MMDF2N02E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS |
| 中文描述： | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 276K |
| 代理商： | MMDF2N02E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
V(BR)DSS
25
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc
VGS(th)
1.0
2.0
3.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
—
—
0.083
0.110
0.100
0.200
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
380
532
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
—
235
329
Transfer Capacitance
—
55
110
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
—
7.0
21
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
—
17
30
Turn–Off Delay Time
—
27
48
Fall Time
—
18
30
Turn–On Delay Time
RG = 9.1
)
—
10
30
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
—
35
70
Turn–Off Delay Time
—
19
38
Fall Time
—
25
50
Gate Charge
VGS = 10 Vdc)
—
10.6
30
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
Q1
Q2
Q3
—
1.3
—
—
2.9
—
—
2.7
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
trr
ta
tb
QRR
—
1.0
1.4
Vdc
Reverse Recovery Time
See Figure 11
dIS/dt = 100 A/
μ
s)
—
34
66
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
—
17
—
—
17
—
Reverse Recovery Storage Charge
—
0.03
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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