參數(shù)資料
型號: MMDF1N05E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
中文描述: 2 A, 50 V, 0.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/6頁
文件大?。?/td> 169K
代理商: MMDF1N05E
3
Motorola TMOS Power MOSFET Transistor Device Data
0.1
0
0
7
0
2
4
6
10
8
6
4
2
I
10
8
6
4
2
00
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance Variation with Temperature
I
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
0
2
4
6
8
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
1.8
1.6
1.2
0.8
0.4
0
R
(
VGS = 10 V
0.2
0.3
0.4
0.5
100
°
C
25
°
C
–55
°
C
4 V
1
3
5
8
VGS = 10 V
ID = 1.5 A
TJ = 25
°
C
5 V
6 V
25
°
C
0.2
0.6
1
1.4
–25
25
75
125
8 V
4.5 V
10 V
–55
°
C
25
°
C
100
°
C
–55
°
C
VGS = 3.5 V
VDS
10 V
100
°
C
Figure 5. On Resistance versus
Gate–To–Source Voltage
Figure 6. Gate Threshold Voltage Variation
with Temperature
150
125
100
75
50
25
0
–25
–50
1.2
1.1
1
0.9
0.8
0.7
V
TJ, JUNCTION TEMPERATURE (
°
C)
VDS = VGS
ID = 1 mA
0.5
0.4
0.3
0.2
02
3
TJ, JUNCTION TEMPERATURE
ID = 1.5 A
VGS = 0
0.1
4
5
6
7
8
9
10
R
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