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參數(shù)資料
| 型號(hào)： | MMDB30-E28 |
| 元件分類： | 階躍恢復(fù)二極管 |
| 英文描述： | SILICON, STEP RECOVERY DIODE |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 609K |
| 代理商： | MMDB30-E28 |
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Description
The diodes feature fully passivated, true mesa construction for
sharp transitions and improved stability. The beam lead SRDs
have the industry’s fastest transition times for millimeter wave
multiplication and picosecond pulse forming.
Features
Output combs to 40+ GHz
Transition times down to 35 ps
Screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings (Chip and Beam Lead)
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA (Beam Lead)
150 mA (Chip)
Power Dissipation
150
°C /
JC at THSK = +25 °C
Derate linearly to zero at T
HSK = +175 °C
Junction Temperature
-65
°C to +175 °C
Storage Temperature
-65
°C to +175 °C
Mounting / Bonding Temperature
+235
°C for 10 seconds (Beam Lead)
+310
°C for 30 seconds (Chip)
Chip and Beam Lead
Model
V
BR
C
J
C
J
t
F
CO
TYP
GHz
JC
MAX
°C/W
Package
MIN
V
MIN
pF
MAX
pF
MIN
ns
TYP
ns
TYP
ps
MAX
ps
MMDB30-B11
14
0.15
0.25
1.0
4.0
30
38
530
600
B11
MMDB35-B11
16
0.13
0.20
1.0
4.0
35
45
482
600
B11
MMDB45-B11
25
0.11
0.20
3.0
8.0
45
58
410
600
B11
MMD805-C12
60
2.5
3.5
80
100
250
300
130
15
C12
MMD810-C12
50
1.5
2.5
40
70
200
250
200
22
C12
MMD820-C12
40
1.0
1.7
30
60
80
100
390
25
C12
MMD830-C11
25
0.5
1.0
15
30
60
80
700
45
C11
MMD832-C11
20
0.4
0.8
10
15
60
80
660
50
C11
MMD835-C11
15
0.3
0.7
10
20
60
70
800
60
C11
MMD837-C11
20
0.2
0.4
5
10
60
70
1,300
60
C11
MMD840-C11
15
0.2
0.4
7
15
60
70
880
60
C11
Test Conditions
I
R =
10 A
V
R = 6 V
F = 1 MHz
I
F = 10 mA
I
R = 6 mA
Measured at
50% Recovery
I
F = 3 mA
V
R = 7 V
I
F = 10 mA
V
R = 10 V
F
CO =
1 / 2 R
S
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