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參數資料
| 型號： | MMC9-65608EV-45 |
| 廠商： | ATMEL CORP |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 45 ns, CDIP32 |
| 封裝： | 0.400 INCH, SIDE BRAZED, DIP-32 |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 445K |
| 代理商： | MMC9-65608EV-45 |
1
Rev. 4151K–AERO–01/06
Features
Operating Voltage: 5V
Access Time: 30, 45 ns
Very Low Power Consumption
– Active: 250 mW (Typ)
– Standby: 1 W (Typ)
– Data Retention: 0.5 W (Typ)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
Single 5V Supply
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
Equal Cycle and Access Time
Gated Inputs:
– No Pull-up/down
– Resistors Are Required
QML Q and V with SMD 5962-89598
ESCC with Specification 9301/047
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 A) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESCC 9000 or QML.
Rad. Tolerant
128K x 8
Very Low Power
5V CMOS SRAM
M65608E
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