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參數(shù)資料
| 型號： | MMBZ6V8ALT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMBZ6V8ALT1G |
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MMBZ5V6ALT1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
24 WATTS
Breakdown Voltage
Max Zener
Impedance
(Note 5)
V
C
@ I
PP
(Note 6)
Device
Marking
V
RWM
Volts
I
R
@
V
RWM
A
V
BR
(Note 4)
(V)
Min
Nom
@ I
T
mA
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
V
C
V
I
PP
A
V
BR
Device
Max
mA
mV/ C
MMBZ5V6AL
5A6
3.0
5.0
5.32
5.6
5.88
20
11
1600
0.25
8.0
3.0
1.26
MMBZ6V2AL
6A2
3.0
0.5
5.89
6.2
6.51
1.0
8.7
2.76
2.80
MMBZ6V8AL
6A8
4.5
0.5
6.46
6.8
7.14
1.0
9.6
2.5
3.4
MMBZ9V1AL
9A1
6.0
0.3
8.65
9.1
9.56
1.0
14
1.7
7.5
MMBZ10VAL
10A
6.5
0.3
9.50
10
10.5
1.0
14.2
1.7
7.5
(V
F
= 0.9 V Max @ I
F
= 10 mA)
40 WATTS
I
R
@
V
RWM
nA
Breakdown Voltage
V
C
@ I
PP
(Note 6)
V
C
V
Device
Marking
V
RWM
Volts
V
BR
(Note 4)
(V)
Min
Nom
@ I
T
mA
I
PP
A
V
BR
Device
Max
mV/ C
MMBZ12VAL
12A
8.5
200
11.40
12
12.60
1.0
17
2.35
7.5
MMBZ15VAL
15A
12
50
14.25
15
15.75
1.0
21
1.9
12.3
MMBZ18VAL
18A
14.5
50
17.10
18
18.90
1.0
25
1.6
15.3
MMBZ20VAL
20A
17
50
19.00
20
21.00
1.0
28
1.4
17.2
MMBZ27VAL
27A
22
50
25.65
27
28.35
1.0
40
1.0
24.3
MMBZ33VAL
4. V
BR
measured at pulse test current I
at an ambient temperature of 25
°
C.
5. Z
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5 and derate per Figure 6
33A
26
50
31.35
33
34.65
1.0
46
0.87
30.4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ6V8ALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 40W, 6.8V, SOT-23 |
| MMBZ6V8ALT3 | 功能描述:TVS二極管陣列 6.8V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ9V1AL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 6V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23, Reverse Stand-Off Voltage Vrwm:6V, Breakdow 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23, Reverse Stand-Off Voltage Vrwm:6V, Breakdown Voltage Min:8.65V, Breakdown Voltage Max:9.56V, Clamping Voltage Vc Max:14V, Peak Pulse Current Ippm:1.7A, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ9V1AL,215 | 功能描述:ESD 抑制器 1Ch 14V 1.7A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ9V1AL-13-F | 制造商:Diodes Incorporated 功能描述: |
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