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參數(shù)資料
| 型號： | MMBZ6V2AL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 20W和40W峰值功率齊納瞬態(tài)電壓抑制器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MMBZ6V2AL |
MOTOROLA
2
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener Impedance (5)
Max
Reverse
(A)
Max Reverse
Voltage @
(V)
Maximum
Coefficient of
(mV/
C)
°
VZT(3)
(V)
@ IT
(mA)
IR @ VR
(
μ
A) (V)
ZZT @ IZT
(
) (mA)
ZZK @ IZK
(
) (mA)
Surge
Current
IRSM(4)
IRSM(4)
(Clamping
Voltage)
VRSM
Temperature
VBR
Min
Nom
Max
5.32
5.6
5.88
20
5.0
3.0
11
1600
0.25
3.0
8.0
1.26
5.89
6.2
6.51
1.0
0.5
3.0
—
—
—
2.76
8.7
2.80
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
(V)
IR (nA)
(A)
Max Reverse
(V)
Maximum
(mV/
°
C)
VBR(3)
(V)
@ IT
(mA)
Reverse Voltage
Working Peak
VRWM
Max Reverse
Leakage Current
IRWM
Max Reverse
Surge Current
IRSM(4)
Voltage @ IRSM(4)
(Clamping Voltage)
VRSM
Temperature
Coefficient of
VBR
Min
Nom
Max
14.25
15
15.75
1.0
12.0
50
1.9
21
12.3
19.0
(3) VZ/VBR measured at pulse test current IT at an ambient temperature of 25
°
C.
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are
(5)
IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
20
21.0
1.0
17.0
50
1.4
28
17.2
TYPICAL CHARACTERISTICS
–40
+50
18
B
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (
°
C)
+100
+150
15
12
9
6
3
0
(
–40
+25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (
°
C)
+85
+125
100
10
1
0.1
0.01
I
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| MMBZ6V2AL,215 | 功能描述:ESD 抑制器 1Ch 8.7V 2.76A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
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| MMBZ6V2ALT1G | 制造商:ON Semiconductor 功能描述:DIODE TVS 制造商:ON Semiconductor 功能描述:DIODE, TVS |
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