參數(shù)資料
型號： MMBZ5V6ALT3
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
中文描述： 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236
封裝： PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù)： 3/6頁
文件大?。?/td> 129K
代理商： MMBZ5V6ALT3
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
PD
TEMPERATURE (
°
C)
FR–5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C
BIAS (V)
200
80
15 V
V
100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr
≤
10
μ
s
HALF VALUE —
IRSM
2
tP
tr
PEAK VALUE — IRSM
100
90
80
70
60
50
40
30
20
10
0
0
25
50
TA, AMBIENT TEMPERATURE (
°
C)
75
100
125
150
175
200
Figure 6. Pulse Derating Curve
P
O
°
Figure 7. Maximum Non–repetitive Surge
Power, Ppk versus PW
p
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
Figure 8. Maximum Non–repetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
P
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
相關(guān)PDF資料
PDF描述
MMBZ5V6ALT3G 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ6V2ALT1 SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER
MMBZ15VALT1 SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER
MMBZ20VALT1 SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER
MMDF1N05E DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBZ5V6ALT3G 功能描述:TVS二極管陣列 5.6V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
MMBZ5V6B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 24W Pk Pwr Zener Trans volt Suppr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
MMBZ5V6VAL-7 制造商:Diodes Incorporated 功能描述:24W AND 40W PEAK PWR DUAL SMD TVS 3SOT-23 - Tape and Reel
MMBZ6V2AL 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 3V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23; Reverse Stand-Off Voltage Vrwm:3V; Breakdown Voltage Min:5.89V; Breakdown Voltage Max:6.51V; Clamping Voltage Vc Max:8.7V; Peak Pulse Current Ippm:2.76A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes
MMBZ6V2AL,215 功能描述:ESD 抑制器 1Ch 8.7V 2.76A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C
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